Several attempts have been made in the last decade for the advancement of high electron mobility transistors (HEMTs). In this paper, we present an analysis of small signal modeling of AIN/GaN/AlGaN double hetero-structure HEMTs. An improved and a proficient param- eter extraction strategy applied to HEMTs for mm-wave applications have been presented. Different performance parameters regarding losses during transmission and their variation with higher frequencies are presented. A proper stability comparison of different devices has been done. Measurements of the scattering parameters (transmission and reflection co- efficients) from frequency range of 0.1 GHz to 40 GHz at room temperature and specific Bias point (VttS= 1.0V, VDS=10V ) with maximum transconductance have been performed. All imaginary and real parts of S-parameters and the impedance parameters are also taken into account. Complete behavior and withstand of the devices up to mention frequencies are presented. The execution is surveyed through S-parameters estimations to assess the devices intrinsic and extrinsic parameters included in the SSM topology by utilizing de-embedding method. Complete analytical method has been presented and verified. Experimental values and simulated values are compared and are found to be in excellent comparison.
High electron mobility transistor, Silicon Carbide, Silicon, Gallium Arsenide, AlGaN/GaN, Small signal modeling, Extraction of parameters, Semi-conductor device measurements.